Польовий транзистор
Маркування: TPC8107
Корпус: SOP-8
Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII)
Технічні параметри:
Drain-Voltage Source: -30V
Drain-gate voltage (RGS = 20 kΩ): -30V
Gate-Voltage Source: ±20V
Drain Current: -13A
Avalanche current: -13A
Drain current pulse: -52A
Power Dissipation: 1.9 W
Operating Junction & Storage Temperature Range: -55 to +150°C