| Manufacturer: |
Texas Instruments |
|
| Product Category: |
MOSFETs |
|
| RoHS: |
|
|
| REACH - SVHC: |
|
|
| Technology: |
Si |
|
| Mounting Style: |
Through Hole |
|
| Package/Case: |
TO-220-3 |
|
| Transistor Polarity: |
N-Channel |
|
| Number of Channels: |
1 Channel |
|
| Vds - Drain-Source Breakdown Voltage: |
100 V |
|
| Id - Continuous Drain Current: |
259 A |
|
| Rds On - Drain-Source Resistance: |
2.7 mOhms |
|
| Vgs - Gate-Source Voltage: |
- 20 V, + 20 V |
|
| Vgs th - Gate-Source Threshold Voltage: |
2.1 V |
|
| Qg - Gate Charge: |
118 nC |
|
| Minimum Operating Temperature: |
- 55 C |
|
| Maximum Operating Temperature: |
+ 175 C |
|
| Pd - Power Dissipation: |
375 W |
|
| Channel Mode: |
Enhancement |
|
| Tradename: |
NexFET |
|
| Series: |
CSD19536KCS |
|
| Packaging: |
Tube |
|
| Brand: |
Texas Instruments |
|
| Configuration: |
Single |
|
| Fall Time: |
5 ns |
|
| Forward Transconductance - Min: |
307 S |
|
| Height: |
16.51 mm |
|
| Length: |
10.67 mm |
|
| Product Type: |
MOSFETs |
|
| Rise Time: |
8 ns |
|
|
50 |
|
| Subcategory: |
Transistors |
|
| Transistor Type: |
1 N-Channel |
|
| Typical Turn-Off Delay Time: |
38 ns |
|
| Typical Turn-On Delay Time: |
14 ns |
|
| Width: |
4.7 mm |
|
| Unit Weight: |
2 g |