IRGP50B60PD1PBF 1шт---100грн--3.01-упаковка №4

• Type of Transistor: MOSFET
• Type Designator: PHP54N06T
• Type of Control Channel: N -Channel
• Maximum Drain-Source Voltage: 55 V
• Maximum Gate-Source Voltage: 20 V
• Maximum Gate-Threshold Voltage: 4 V
• Maximum Drain Current: 54 A
• Drain-Source Capacitance: 290 pF
• Maximum Operating Junction Temperature: 175 °C
• Rise Time: 74 nS
• Maximum Drain-Source On-State Resistance: 0.02 Ohm
• Maximum Power Dissipation: 118 W
• Package: TO-220AB

 Транзистор SPP20N60S5----1шт---85грн ---17.07---коробка №4