RJH60F7DPQ-AO - Power IGBT, 600V, 50A, TO-247 (відновлені ніжки)

Low collector to emitter saturation voltage
VCE(sat) = 1.35 V typ. (at IC = 50 A, VGE = 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
tf = 74 ns typ. (at IC = 30 A, VCE = 400 V, VGE = 15 V, Rg = 5 ?, Ta = 25°C, inductive load)